Single-ended power amplifier design using 4.8 mm gate width heterostructure FET device for high efficiency performance

Author

Virdee, Bal S. ; Trinooga, L.A.

Author_Institution

Sch. of Commun. Technol. & Math. Sci., North London Univ., UK

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

130

Lastpage

132

Abstract

This paper describes the design of a single-ended power amplifier at X-band for high efficiency performance using a state-of-the-art power heterostructure FET (HFET) device operating in class AB/F. The 4.8 mm gate HFET was modelled by scaling the small- and large-signal models representing the 2.4 mm unit-cell HFET. Conventional MIC technology was employed for practically realising the design. The amplifier exhibited power-added efficiency significantly higher than conventional power devices. The 4.8 mm gate width HFET amplifier fabricated achieved a power-added efficiency of 53 percent at an output power of 2.5 W with a small-signal gain of 8 dB.

Keywords

hybrid integrated circuits; integrated circuit design; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; microwave power transistors; power field effect transistors; power integrated circuits; semiconductor device models; 2.5 W; 4.8 mm; 53 percent; 8 dB; X-band; class-AB/F; high efficiency performance; hybrid MIC technology; hybrid power amplifier; large-signal modelling; power HFET; power heterostructure FET; single-ended power amplifier; small-signal modelling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-7968-00-6

Type

conf

Filename

1173731