Title :
Development of back-to-back connected edge diodes for THz multipliers
Author :
Shashkin, V.I. ; Vaks, V.L. ; Vopilkin, Evgeny A. ; Daniltsev, V.M. ; Klimov, Alexander Yu ; Kuznetsov, M.I. ; Murel, A.V. ; Rogov, Vladimir V. ; Khrykin, O.I.
Author_Institution :
Inst. for Phys. of Microstructures RAS, Nizhny Novgorod, Russia
Abstract :
A technology for fabrication of back-to-back connected diodes with edge (nonplanar) Schottky contacts to epitaxial layer (or heterolayers) on semi-insulating GaAs substrate has been developed. A concept of THz frequency multipliers on their basis has been formulated. The results of the structure design, test measurements and experiments are presented.
Keywords :
III-V semiconductors; Schottky diodes; frequency multipliers; gallium arsenide; submillimetre wave diodes; GaAs; THz frequency multiplier; back-to-back connected edge diode; epitaxial layer; fabrication technology; heterolayer; nonplanar Schottky contact; semi-insulating GaAs substrate;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
