DocumentCode
389129
Title
The radiation firmness of the GaAs-AlGaAs HEMT ohmic contacts
Author
Konakova, R.V. ; Milenin, V.V. ; Rengevych, O.E. ; Stovpovoy, M.A.
Author_Institution
Inst. of Semicond. Phys. NAS of Ukraine, Kiev, Ukraine
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
434
Lastpage
436
Abstract
The results of investigation of the effect of /spl gamma/-radiation on the GaAs-AlGaAs field-effect transistors ohmic contacts specific contact resistivity are presented. The surface microrelief investigations and their correlation with the ohmic contacts parameters are presented. Investigations were carried out for two structure types subjected to various thermal treatment. It was shown that /spl gamma/-radiation may be used for parameters improvement; the radiation limit was determined.
Keywords
III-V semiconductors; aluminium compounds; contact resistance; gallium arsenide; gamma-ray effects; heat treatment; high electron mobility transistors; ohmic contacts; radiation hardening (electronics); GaAs-AlGaAs; GaAs-AlGaAs HEMT; field effect transistor; gamma ray irradiation; ohmic contact; radiation hardness; specific contact resistivity; surface microrelief; thermal treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173915
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