Title :
On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination
Author :
Privat, A. ; Touboul, A.D. ; Michez, A. ; Bourdarie, S. ; Vaille, J.R. ; Wrobel, F. ; Chatry, N. ; Chaumont, G. ; Lorfevre, E. ; Bezerra, F. ; Saigne, F.
Author_Institution :
IES, Univ. Montpellier 2, Montpellier, France
Abstract :
This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.
Keywords :
power MOSFET; radiation hardening (electronics); semiconductor device reliability; gate current; heavy ion irradiation; post-irradiation-gate-stress test; radiation-hardened power MOSFET; sensitive operating area determination; space qualification; MOSFET; Radiation effects; Radiation hardening (electronics); Reliability; Heavy ion; SEGR; latent Defect; post-irradiation-gate-stress; power MOSFET; reliability;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2365041
