Large-signal modeling of HEMT device based on neural network

Author

Sun, Lingling ; Liao, YiXing ; Zheng, XueFeng ; Cheng, ZhiGang ; Liu, Jun ; Zhou, Lei

Author_Institution

CAD Center, Hangzhou Inst. of Electron. Eng., China

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

883

Lastpage

886

Abstract

In this article, a neural network model using Levenberg-Marquart algorithm and hyperbolic tangent activation function is developed to simulate three nonlinear parameters for HEMT device. Compared with BP neural network, this ANN model can accelerate convergence. The example shows that the developed ANN model possesses higher accuracy and good generalization. It can be applied to device modeling efficiently.

Keywords

high electron mobility transistors; neural nets; semiconductor device models; HEMT device; Levenberg-Marquart algorithm; artificial neural network; hyperbolic tangent activation function; large-signal model; nonlinear parameters; Analytical models; Artificial neural networks; HEMTs; Heterojunction bipolar transistors; Integrated circuit modeling; Microwave devices; Neural networks; Neurons; Solid modeling; Table lookup;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187843

Filename

1187843

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=392029