DocumentCode
392606
Title
Preparation of p- and n-type SiC-based thermoelectric materials by spark plasma sintering
Author
Kado, Naomi ; Kitagawa, Hiroyuki ; Ueda, Yu. ; Kanayama, Nobuyuki ; Noda, Yasutoshi
Author_Institution
Dept. of Material Sci., Shimane Univ., Matsue, Japan
fYear
2002
fDate
25-29 Aug. 2002
Firstpage
163
Lastpage
165
Abstract
We report on the preparation of Si3N4 or Al4C3 added SiC by spark plasma sintering (SPS) and their thermoelectric properties. The relative densities of all the sintered materials were more than 80% of the theoretical value. The conduction types were controlled by the addition of Si3N4 for n-type and Al4C3 for p-type. The electrical resistivity decreased and the Seebeck coefficient increased with temperature. We also found that the power factor depends on the composition of the Si3N4 or Al4C3 and takes the maximum value at 7wt% addition at 973K.
Keywords
Seebeck effect; aluminium compounds; density; electrical conductivity; electrical resistivity; plasma materials processing; semiconductor materials; silicon compounds; sintering; thermoelectricity; Seebeck coefficient; SiC-Al4C3; SiC-Si3N4; SiC-based thermoelectric materials; composition dependence; conduction type; electrical resistivity; n-SiC-Si3N4; p-SiC-Al4C3; power factor; relative density; spark plasma sintering; temperature dependence; thermoelectric properties; Conducting materials; Electric resistance; Plasma density; Plasma materials processing; Plasma properties; Plasma temperature; Reactive power; Silicon carbide; Sparks; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN
0-7803-7683-8
Type
conf
DOI
10.1109/ICT.2002.1190290
Filename
1190290
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