• DocumentCode
    392606
  • Title

    Preparation of p- and n-type SiC-based thermoelectric materials by spark plasma sintering

  • Author

    Kado, Naomi ; Kitagawa, Hiroyuki ; Ueda, Yu. ; Kanayama, Nobuyuki ; Noda, Yasutoshi

  • Author_Institution
    Dept. of Material Sci., Shimane Univ., Matsue, Japan
  • fYear
    2002
  • fDate
    25-29 Aug. 2002
  • Firstpage
    163
  • Lastpage
    165
  • Abstract
    We report on the preparation of Si3N4 or Al4C3 added SiC by spark plasma sintering (SPS) and their thermoelectric properties. The relative densities of all the sintered materials were more than 80% of the theoretical value. The conduction types were controlled by the addition of Si3N4 for n-type and Al4C3 for p-type. The electrical resistivity decreased and the Seebeck coefficient increased with temperature. We also found that the power factor depends on the composition of the Si3N4 or Al4C3 and takes the maximum value at 7wt% addition at 973K.
  • Keywords
    Seebeck effect; aluminium compounds; density; electrical conductivity; electrical resistivity; plasma materials processing; semiconductor materials; silicon compounds; sintering; thermoelectricity; Seebeck coefficient; SiC-Al4C3; SiC-Si3N4; SiC-based thermoelectric materials; composition dependence; conduction type; electrical resistivity; n-SiC-Si3N4; p-SiC-Al4C3; power factor; relative density; spark plasma sintering; temperature dependence; thermoelectric properties; Conducting materials; Electric resistance; Plasma density; Plasma materials processing; Plasma properties; Plasma temperature; Reactive power; Silicon carbide; Sparks; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
  • Print_ISBN
    0-7803-7683-8
  • Type

    conf

  • DOI
    10.1109/ICT.2002.1190290
  • Filename
    1190290