Stress diagnostics in multicrystalline silicon wafers using an acoustic technique

Author

Belyaev, A. ; Lulu, S. ; Tarasov, I. ; Ostapenko, S. ; Kalejs, J.P.

Author_Institution

Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

332

Lastpage

335

Abstract

Residual stress is generated in silicon crystals during growth of material for use as substrates for solar cells. This stress affects yield in processing the wafers into cells and modules. We report here on the application of a resonance acoustic method, used previously to measure stress in CZ silicon wafers, to characterize multicrystalline EFG silicon ribbon wafers.

Keywords

acoustic applications; acoustic resonance; elemental semiconductors; internal stresses; silicon; solar cells; substrates; Si; multicrystalline EFG silicon ribbon wafers; multicrystalline silicon wafers; residual stress; resonance acoustic method; silicon crystals; solar cell substrates; stress diagnostics; Acoustic applications; Acoustic measurements; Crystalline materials; Crystals; Photovoltaic cells; Residual stresses; Resonance; Silicon; Solar power generation; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190526

Filename

1190526

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=392632