• DocumentCode
    392637
  • Title

    Current-induced performance degradation of Cz-Si solar cells

  • Author

    Hashigami, H. ; Itakura, Y. ; Saitoh, T.

  • Author_Institution
    Tokyo Univ. of Agric. & Technol., Japan
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    426
  • Lastpage
    429
  • Abstract
    B-O-correlated performance degradation in Cz-Si solar cells has been investigated. The current is injected into solar cells in comparison with the light-induced cell performance degradation. A significant difference is found between current injection and illumination in low-injection region. The degradation in high injection region is explained by lifetime degradation calculated from Jsc-V∝ curves. A significant degradation is a rapid performance drop at the initial decay. V∝ recovery property is found to be processed single-exponentially in spite of the multi-exponential degradation.
  • Keywords
    charge injection; elemental semiconductors; semiconductor device measurement; silicon; solar cells; B-O-correlated performance degradation; Cz-Si solar cells; Si; current injection; current-induced performance degradation; lifetime degradation; low-injection region; Annealing; Boron; Data analysis; Degradation; Equations; Lighting; Metastasis; Monitoring; Photovoltaic cells; Pulse measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190550
  • Filename
    1190550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=392637