SiON AR layer application for silicon solar cells

Author

Huang, C.S. ; Huang, C.J. ; Chen, C.T. ; Lin, S.C. ; Kuo, L.C.

Author_Institution

Mater. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2002

fDate

19-24 May 2002

Firstpage

469

Lastpage

471

Abstract

The experimental result of a more practical solar cell antireflection coating (ARC)- SiON film is presented. The advantage of employing SiON film is that PECVD grown SiON films needs less maintenance than grown SiN films. The thick deposited SiON attached on the PECVD chamber walls can be easily cleaned off by applying clean gas into the chamber; this can efficiently shorten equipment maintenance time, and increase production. In the SiON process, the desired film growth rate, reflectance, and refractive index are attainable by changing O₂ flow.

Keywords

antireflection coatings; plasma CVD coatings; reflectivity; refractive index; silicon compounds; solar cells; O₂; O₂ flow; PECVD chamber walls; PECVD grown SiON films; SiON AR layer application; SiON-Si; clean gas; equipment maintenance time; film growth rate; less maintenance; reflectance; refractive index; silicon solar cells; solar cell antireflection coating; thick deposited SiON; Coatings; Etching; Laboratories; Optical films; Photovoltaic cells; Photovoltaic systems; Reflectivity; Refractive index; Silicon compounds; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190561

Filename

1190561