• DocumentCode
    392653
  • Title

    27.5% efficiency InGaP/InGaAs/Ge advanced triple junction (ATJ) space solar cells for high volume manufacturing

  • Author

    Stan, M.A. ; Aiken, D.J. ; Sharps, P.R. ; Fatemi, N.S. ; Spadafora, F.A. ; Hills, J. ; Yoo, H. ; Clevenger, B.

  • Author_Institution
    Emcore Photovoltaics, Albuquerque, NM, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    816
  • Lastpage
    819
  • Abstract
    Results of improvements in Emcore\´s large-area ( a 26.6 cm2) triple-junction (3J) space solar cells are presented. Volume production of this InGaP/InGaAs/Ge advanced triple-junction (ATJ) process shows an individual cell average conversion efficiency of 27.5% (AMO, 135.3 mW/cm, 28°C) with observed lot average conversion efficiencies greater than 28.0%. The ATJ cells maintain a radiation hard design similar to that used in the first generation Emcore 3J solar cells. The power remaining factors after irradiation with 1-MeV electrons at fluences of 5E14, 1E15, and 5E15 e/ cm2 are 0.89, 0.85,and 0.74 respectively. The realized improvements in the ATJ solar cell have resulted in part from an improved "blue" response in the Ge subcell, the addition of indium to the GaAs middle cell composition, and from improvements to the bulk material quality of the InGaP top cell.
  • Keywords
    III-V semiconductors; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; semiconductor device measurement; solar cells; space vehicles; 1 MeV; 27.5 percent; 28 degC; ATJ cells; InGaP-InGaAs-Ge; InGaP/InGaAs/Ge advanced triple junction space solar cells; conversion efficiency; electron irradiation; high volume manufacturing; radiation hard design; Electrons; Fabrication; Gallium arsenide; Indium gallium arsenide; Manufacturing; Photovoltaic cells; Production; Radiative recombination; Solar power generation; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190700
  • Filename
    1190700