AM0 calibration of 34% efficient mechanically stacked GaInP/GaAsGaSb circuits

Author

Fraas, Lewis ; Avery, James ; Scheiman, David

Author_Institution

JX Crystals Inc., Issaquah, WA, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

912

Lastpage

915

Abstract

During a recent NASA Phase 2 SBIR contract JX Crystals fabricated a batch of triple-junction voltage-matched line-focus concentrator cell circuits, which measured up to 3.4 watts of output power, over 30% AM0 efficiency, during initial flash testing. These circuits have 4 GaInP/GaAs dual junction cells on transparent GaAs assembled on top of 8 diffused junction GaSb booster cells. A novel front cell contact enables all top side bonding. Three of these circuits were flown on the NASA Lear Jet for confirming calibration in October 2001. The flight samples were then used to calibrate JXC´s in-house flash tester and corrected results are reported herein.

Keywords

III-V semiconductors; calibration; gallium arsenide; gallium compounds; indium compounds; solar cells; 3.4 W; 34 percent; AM0 calibration; GaInP-GaAs-GaSb; GaInP/GaAs dual junction cells; calibration; diffused junction GaSb booster cells; mechanically stacked GaInP/GaAsGaSb circuits; Calibration; Circuit testing; Contracts; Crystals; Gallium arsenide; NASA; Phase measurement; Power generation; Power measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190728

Filename

1190728