• DocumentCode
    392671
  • Title

    Multicrystalline LLC-silicon thin film cells on glass

  • Author

    Andra, Gudrun ; Bergmann, Joachim ; Ose, Ekkehart ; Schmidt, Manfred ; Sinh, Ngo Duong ; Falk, Fritz

  • Author_Institution
    Inst. fur Physikalische Hochtechnologie e.V, Jena, Germany
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    1306
  • Lastpage
    1309
  • Abstract
    In a one chamber process multicrystalline silicon thin film solar cells with crystallites in the range of 10 to more than 100 μm were deposited on uncoated glass by layered laser crystallization (LLC). During PECVD deposition of a-Si:H, laser crystallization was performed in the deposition chamber. A 400 nm thick seed layer simultaneously acting as transparent electrode was crystallized by scanning an Ar+-laser beam. Epitaxial thickening by applying repeated pulses of an KrF excimer laser was performed during further a-Si:H deposition. p+-p-n+ cells with 3 μm thick absorber without reflector and without antireflection coating showed Voc = 425 mV, Isc = 9.8 mA/cm2, FF = 55%, and n = 2.3%.
  • Keywords
    crystallisation; crystallites; elemental semiconductors; hydrogen; plasma CVD coatings; semiconductor device measurement; silicon; solar cells; 10 to 100 micron; 2.3 percent; 3 micron; PECVD deposition; Si:H; SiO2; crystallites; epitaxial thickening; glass; layered laser crystallization; multicrystalline LLC-silicon thin film cells; p+-p-n+ cells; Argon; Crystallization; Electrodes; Glass; Photovoltaic cells; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190849
  • Filename
    1190849