DocumentCode
392671
Title
Multicrystalline LLC-silicon thin film cells on glass
Author
Andra, Gudrun ; Bergmann, Joachim ; Ose, Ekkehart ; Schmidt, Manfred ; Sinh, Ngo Duong ; Falk, Fritz
Author_Institution
Inst. fur Physikalische Hochtechnologie e.V, Jena, Germany
fYear
2002
fDate
19-24 May 2002
Firstpage
1306
Lastpage
1309
Abstract
In a one chamber process multicrystalline silicon thin film solar cells with crystallites in the range of 10 to more than 100 μm were deposited on uncoated glass by layered laser crystallization (LLC). During PECVD deposition of a-Si:H, laser crystallization was performed in the deposition chamber. A 400 nm thick seed layer simultaneously acting as transparent electrode was crystallized by scanning an Ar+-laser beam. Epitaxial thickening by applying repeated pulses of an KrF excimer laser was performed during further a-Si:H deposition. p+-p-n+ cells with 3 μm thick absorber without reflector and without antireflection coating showed Voc = 425 mV, Isc = 9.8 mA/cm2, FF = 55%, and n = 2.3%.
Keywords
crystallisation; crystallites; elemental semiconductors; hydrogen; plasma CVD coatings; semiconductor device measurement; silicon; solar cells; 10 to 100 micron; 2.3 percent; 3 micron; PECVD deposition; Si:H; SiO2; crystallites; epitaxial thickening; glass; layered laser crystallization; multicrystalline LLC-silicon thin film cells; p+-p-n+ cells; Argon; Crystallization; Electrodes; Glass; Photovoltaic cells; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190849
Filename
1190849
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