Nonlinear SAW propagation in thin-film systems with residual stress

Author

Kumon, R.E.

Author_Institution

Nat. Inst. of Stand. & Technol., Boulder, CO, USA

Volume

1

fYear

2002

fDate

8-11 Oct. 2002

Firstpage

419

Abstract

The propagation of small- and finite-amplitude surface acoustic waves (SAWs) in stressed thin-film systems is modeled. Results are presented for an initially monofrequency, plane wave traveling in the [100] direction of systems composed of either Ge (loading) or diamond (stiffening) epitaxial films under compressive stress on an unstressed [001] Si substrate. Cases are considered for both thinner and thicker films in terms of their ratios of dispersion to nonlinearity ratios. For finite-amplitude waves, comparison between unstressed and stressed films indicates that larger effects occur at longer propagation distances and for higher harmonics.

Keywords

acoustic wave propagation; diamond; elemental semiconductors; germanium; internal stresses; piezoelectric semiconductors; piezoelectric thin films; semiconductor epitaxial layers; silicon; surface acoustic waves; C; Ge; Ge epitaxial films; Si; compressive stress; diamond epitaxial films; finite-amplitude surface acoustic waves; initially monofrequency plane wave; nonlinear SAW propagation; small-amplitude surface acoustic waves; thin-film systems with residual stress; unstressed [001] Si substrate; Acoustic propagation; Capacitive sensors; Dispersion; Equations; Frequency; NIST; Residual stresses; Substrates; Surface acoustic waves; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE

ISSN

1051-0117

Print_ISBN

0-7803-7582-3

Type

conf

DOI

10.1109/ULTSYM.2002.1193433

Filename

1193433