DocumentCode
393319
Title
Modelling of ZnO-based BAWs at high signal levels
Author
Ellä, Juha ; Ylilammi, Markku
Volume
1
fYear
2002
fDate
8-11 Oct. 2002
Firstpage
985
Abstract
This paper proposes a method to simulate the center frequency shift in bulk acoustic wave (BAW) filters, caused by high input signal levels, which heat up the devices. The results were verified by wafer level measurements and on diced devices wire bonded to jigs. In addition the temperature distribution on diced samples was imaged with an infrared camera. The measured and calculated center frequency shifts as well as the temperature distribution in filters correlate fairly well.
Keywords
II-VI semiconductors; acoustic filters; piezoelectric materials; piezoelectric thin films; semiconductor device models; semiconductor thin films; temperature distribution; zinc compounds; ZnO; ZnO-based BAWs; center frequency shift; center frequency shifts; diced devices; high signal levels; infrared camera; temperature distribution; wafer level measurements; wire bonded to jigs; Acoustic waves; Filters; Fixtures; Frequency; Infrared imaging; Level measurement; Semiconductor device modeling; Temperature distribution; Wafer bonding; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
ISSN
1051-0117
Print_ISBN
0-7803-7582-3
Type
conf
DOI
10.1109/ULTSYM.2002.1193561
Filename
1193561
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