Modeling of diffusion process in p-n junction diode using matrix rational approximation

Author

Tanji, Yuichi

Author_Institution

Dept. of Reliability-based Inf. Syst. Eng., Kagawa Univ., Japan

Volume

3

fYear

2003

fDate

25-28 May 2003

Abstract

The diffusion process in p-n junction diodes is modeled using the matrix rational approximation. The diffusion process is governed by the carrier continuity equation which is equivalent to an RCG transmission line. The matrix rational approximation here is used to provide a lumped network model of the RCG transmission line preserving the passivity. In an example, comparable accuracy with mixed-level circuit and device simulation and superior efficiency to different passive models are observed.

Keywords

carrier lifetime; electron-hole recombination; equivalent circuits; matrix algebra; p-n junctions; semiconductor device models; semiconductor diodes; transient response; transmission line theory; RCG transmission line; carrier continuity equation; carrier diffusion; carrier recombination; diffusion process modeling; lumped network model; matrix rational approximation; p-n junction diode; passivity preservation; Circuit simulation; Diffusion processes; Diodes; Distributed parameter circuits; Equations; P-n junctions; Predictive models; RLC circuits; Transmission line matrix methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205062

Filename

1205062