DocumentCode
396274
Title
Fabrication of high uniform BH DFB laser using new isotropic dry/wet mesa etching
Author
Kim, Hyeon Soo ; Lee, Jung Kee ; Bang, Young Churl ; Kim, Tae Jin ; Yu, Joon Sang ; Bang, Dong-Soo ; Choo, Ahn Goo ; Kim, Tae Il
Author_Institution
Photonics Solution Lab., Samsung Electron. Co. Ltd., Suwon, South Korea
fYear
2003
fDate
12-16 May 2003
Firstpage
186
Lastpage
189
Abstract
In this work, we developed new plasma etching for mesa formation of buried heterostructure lasers. The uniform characteristics and long-term reliability of device were obtained using optimized dry etching and additional wet etching. These optimum device performances were ascribed to the damage-free isotropic etching shapes made by new dry etching methods.
Keywords
distributed Bragg reflector lasers; etching; semiconductor lasers; additional wet etching; buried heterostructure lasers; damage-free isotropic etching shapes; high uniform BH DFB laser; isotropic dry/wet mesa etching; long-term reliability; optimized dry etching; uniform characteristics; Chemical lasers; Dry etching; Gas lasers; MOCVD; Optical device fabrication; Plasma applications; Plasma chemistry; Plasma density; Shape; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205345
Filename
1205345
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