DocumentCode
396289
Title
Integrated 1.3μm DFB laser electro-absorption modulator based on identical MQW-double stack active layer with 25GHz small-signal modulation performance
Author
Stegmueller, Bernhard ; Hanke, Christian
Author_Institution
Corporate Res. Photonics, Infineon Technol., Munich, Germany
fYear
2003
fDate
12-16 May 2003
Firstpage
516
Lastpage
518
Abstract
25GHz small signal modulation bandwidth for a 1.31μm electro-absorption modulator monolithically integrated with a DFB laser diode has been achieved using an identical multiple quantum well-layer structure composed of two different QW types.
Keywords
distributed feedback lasers; electro-optical modulation; electroabsorption; integrated optoelectronics; optical transmitters; quantum well lasers; 1.31 micron; 25 GHz; DFB laser diode; InGaAsP-InP; MQW-double stack active layer; integrated 1.3μm DFB laser electro-absorption modulator; multiple quantum well-layer; small-signal modulation performance; Bandwidth; Chirp modulation; Diode lasers; Distributed feedback devices; Laser feedback; Laser transitions; Optical feedback; Optical modulation; Optical transmitters; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205430
Filename
1205430
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