• DocumentCode
    396342
  • Title

    Self-regulated four-phased charge pump with boosted wells

  • Author

    Shor, Joseph S. ; Polansky, Yan ; Sofer, Yair ; Maayan, Eduardo

  • Author_Institution
    Saifun Semicond., Netanya, Israel
  • Volume
    1
  • fYear
    2003
  • fDate
    25-28 May 2003
  • Abstract
    Charge pumps are useful to achieve on-chip boosted voltages in EPROM and other NVM devices. A new capacitive charge pump architecture is suggested which eliminates bulk effect by boosting the wells of transistors in the charge pump stages. In addition, the pump contains an internal voltage regulator, enabling it to supply a constant boosted output, regardless of process, environment and loading conditions. The pump operates from a 2.7V supply, provides up to 10mA at 8V and occupies 2 mm2.
  • Keywords
    EPROM; voltage regulators; 10 mA; 2.7 V; 8 V; EPROM; boosted transistor well; capacitive architecture; internal voltage regulator; nonvolatile memory; on-chip voltage; self-regulated four-phased charge pump; Boosting; Charge pumps; Charge transfer; Clocks; Diodes; EPROM; MOS capacitors; Nonvolatile memory; Regulators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
  • Print_ISBN
    0-7803-7761-3
  • Type

    conf

  • DOI
    10.1109/ISCAS.2003.1205545
  • Filename
    1205545