DocumentCode
396342
Title
Self-regulated four-phased charge pump with boosted wells
Author
Shor, Joseph S. ; Polansky, Yan ; Sofer, Yair ; Maayan, Eduardo
Author_Institution
Saifun Semicond., Netanya, Israel
Volume
1
fYear
2003
fDate
25-28 May 2003
Abstract
Charge pumps are useful to achieve on-chip boosted voltages in EPROM and other NVM devices. A new capacitive charge pump architecture is suggested which eliminates bulk effect by boosting the wells of transistors in the charge pump stages. In addition, the pump contains an internal voltage regulator, enabling it to supply a constant boosted output, regardless of process, environment and loading conditions. The pump operates from a 2.7V supply, provides up to 10mA at 8V and occupies 2 mm2.
Keywords
EPROM; voltage regulators; 10 mA; 2.7 V; 8 V; EPROM; boosted transistor well; capacitive architecture; internal voltage regulator; nonvolatile memory; on-chip voltage; self-regulated four-phased charge pump; Boosting; Charge pumps; Charge transfer; Clocks; Diodes; EPROM; MOS capacitors; Nonvolatile memory; Regulators; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN
0-7803-7761-3
Type
conf
DOI
10.1109/ISCAS.2003.1205545
Filename
1205545
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