Title :
Inductorless RF amplifier with tuneable band-selection and image rejection
Author :
Thanachayanont, A. ; Sae-Ngow, S.
Author_Institution :
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
This paper describes the design of two inductorless amplifiers that provide both band-selection and image-rejection, and thus can be used to perform the functions of bandpass filters, low-noise amplifier and image-rejection filter in the superheterodyne RF receiver front-end. Two topologies, namely the source-degeneration and bridge-T notch, are employed due to their excellent image rejection and independent control of the shape and depth. Simulation results using a 0.35-μm CMOS technology demonstrate the feasibility of both circuits for operation in the low GHz frequency range with passband gain around 30 dB and maximum image suppression of 80 dB.
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; active filters; band-pass filters; bridge circuits; notch filters; superheterodyne receivers; 0.35 micron; 30 dB; CMOS technology; LNA; bandpass filters; bridge-T notch topology; image suppression; image-rejection filter; inductorless RF amplifier; low-noise amplifier; source-degeneration topology; superheterodyne RF receiver front-end; tuneable band-selection; Band pass filters; CMOS technology; Circuit simulation; Circuit topology; Low-noise amplifiers; Passband; Radio frequency; Radiofrequency amplifiers; Shape control; Tunable circuits and devices;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1205628
