Title :
Light-Emitting n-ZnO Nanotube/n+-GaAs Heterostructures Processed at Low Temperatures
Author :
Karegar, Faezeh ; Kolahdouz, Mohammadreza ; Nayeri, Fatemeh D. ; Soleimanzadeh, Reza ; Hosseini, Mohammad ; Esfahani, Zahra Kolahdouz ; Kouchi Zhang
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
Abstract :
In this letter, a light-emitting heterostructure is designed and manufactured using vertically aligned n-type zinc oxide nanorods (ZnO NRs) on n+-GaAs wafers. The chemically grown ZnO NRs were also converted to nanotubes (NTs) using 2 molar KCl solution and the device fabrication was repeated using them. Both types exhibited a significant visible light at a forward bias of 1 V but with different brightness. Photoluminescence ~390 nm from NRs and NTs was obtained and the current injection in these devices is explained by a tunneling phenomenon.
Keywords :
II-VI semiconductors; III-V semiconductors; brightness; gallium arsenide; luminescent devices; nanophotonics; nanorods; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor nanotubes; tunnelling; wide band gap semiconductors; zinc compounds; ZnO-GaAs; brightness; current injection; device fabrication; forward bias; light-emitting heterostructure; n+-GaAs wafers; nanotubes; photoluminescence; tunneling phenomenon; vertically aligned n-type zinc oxide nanorods; visible light; Energy states; Gallium arsenide; Nanostructures; Photonic band gap; Surface treatment; Tunneling; Zinc oxide; Heterostructure; ZnO; heterostructure; nanorod; nanotube; visible range emission;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2424454
