Title :
A linearized 2-GHz SiGe low noise amplifier for direct conversion receiver
Author :
Kaukovuori, Jouni ; Hotti, Mikko ; Ryynänen, Jussi ; Jussila, Jarkko ; Halonen, Kari
Author_Institution :
Helsinki Univ. of Technol., Espoo, Finland
Abstract :
A 2-GHz low noise amplifier (LNA) with optional dual bias feed (DBF) linearization circuit was studied and implemented. The operation of the DBF circuit is described in detail and an analytical formula for the extra base current supplied by the DBF is derived in this paper. Simulation results show that the DBF circuit improves ICP and IIP3 by 6.5 dB and 7 dB, respectively. The circuit was fabricated using a 0.35-μm 45-GHz fT SiGe BiCMOS technology.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; linearisation techniques; radio receivers; 0.35 micron; 2 GHz; 45 GHz; BiCMOS; DBF circuit; ICP; IIP3; SiGe; base current; direct conversion receiver; linearization circuit; low noise amplifier; optional dual bias feed; Circuit noise; Circuit simulation; Current supplies; Feeds; Germanium silicon alloys; Impedance matching; Linearity; Low-noise amplifiers; Noise measurement; Silicon germanium;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1205935
