DocumentCode
397442
Title
High-Q inductors on digital VLSI CMOS substrate for analog RF applications
Author
Ellinger, Frank ; Kossel, Marcel ; Huber, Meik ; Schmatz, Martin ; Kromer, Christian ; Sialm, Gion ; Barras, David ; Rodoni, Lucio ; von Buren, G. ; Jackel, Heinz
Author_Institution
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Volume
2
fYear
2003
fDate
20-23 Sept. 2003
Firstpage
869
Abstract
In this paper, the design, modeling and performance of high-Q RF inductors using aggressively scaled digital VLSI CMOS technology are presented. Quality factors of 12.7 and 10, and self resonance frequencies of 45 GHz and 29 GHz are measured for inductors with values of 0.31 nH and 0.9 nH, respectively. The influence of parasitics is also investigated.
Keywords
CMOS analogue integrated circuits; MMIC; Q-factor; VLSI; circuit simulation; thin film inductors; 29 GHz; 45 GHz; MMIC; analog RF IC; digital VLSI CMOS substrates; high-Q RF inductors; microwave integrated circuits; parasitic resistance; self resonance frequency; CMOS technology; Conductivity; Inductors; Integrated circuit technology; MOSFETs; Q factor; Radio frequency; Spirals; Substrates; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International
Print_ISBN
0-7803-7824-5
Type
conf
DOI
10.1109/IMOC.2003.1242694
Filename
1242694
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