Extraction of S-parameter using the three-dimensional transmission-line matrix (TLM) method

Author

De Carvalho, C. A Tenorio, Jr. ; De Menezes, Leonardo R A X

Author_Institution

Eletrical Eng. Dept., Brasilia Univ., Brazil

Volume

2

fYear

2003

fDate

20-23 Sept. 2003

Firstpage

967

Abstract

The validation of a simple technique for extraction of lines parameters using numerical simulation with the transmission-line matrix (TLM) method is presented in this work. The scattering parameters S₁₁ and S₂₁ obtained were in excellent agreement comparison with the SDA (spectral domain analysis) method. Beyond these parameters, we obtain easily from the T-equivalent circuit the impedance and admittance matrices. Besides showing the efficiency of this technique, it is proved that the TLM method is a powerful tool for simulation of integrated circuits in the time domain.

Keywords

S-parameters; circuit simulation; electric admittance; equivalent circuits; impedance matrix; transmission line matrix methods; 3D TLM method; S-parameter extraction; SCN; SDA method; T-equivalent circuit; admittance matrix; impedance matrix; integrated circuit simulation; scattering parameters; spectral domain analysis; symmetrical condensed node; time domain analysis; transmission-line matrix method; Circuits; Electromagnetic scattering; Impedance; Numerical simulation; Scattering parameters; Symmetric matrices; Transmission line matrix methods; Transmission line theory; Transmission lines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International

Print_ISBN

0-7803-7824-5

Type

conf

DOI

10.1109/IMOC.2003.1242712

Filename

1242712