Correlation of threading screw dislocation density to GaN 2-DEG mobility

Author

Hite, Jennifer K. ; Gaddipati, P. ; Meyer, D.J. ; Mastro, Michael A. ; Eddy, Charles R.

Author_Institution

U.S. Naval Res. Lab., Washington, DC, USA

Volume

50

Issue

23

fYear

2014

fDate

11 6 2014

Firstpage

1722

Lastpage

1724

Abstract

A direct correlation between local threading screw dislocation densities in an aluminium gallium nitride/gallium nitride (AlGaN/GaN) heterostructure and the mobility of electrons in the two-dimensional electron gas (2-DEG) formed at the interface of that heterostructure is presented. Threading screw dislocations are directly imaged through open areas of Hall-effect test structures using electron channelling contrast imaging. The dislocation density measured for a given test structure is correlated to the mobility of the same structure. The results show a direct, negative correlation between mobility and screw/mixed dislocation density.

Keywords

Hall effect; III-V semiconductors; aluminium compounds; channelling; dislocation density; electron mobility; gallium compounds; high electron mobility transistors; screw dislocations; two-dimensional electron gas; wide band gap semiconductors; 2-DEG mobility; AlGaN-GaN; ECCI; HEMT; Hall effect test structures; electron channelling contrast imaging; high electron mobility transistors; threading screw dislocation density; two-dimensional electron gas;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.2401

Filename

6955024