DocumentCode
398253
Title
Self-heating effects in virtual substrate SiGe HBTs
Author
Jankovic, Nebojsa D. ; Horsfall, Aulton B.
Author_Institution
Microelectron. Dept., Nis Univ., Serbia
Volume
2
fYear
2003
fDate
1-3 Oct. 2003
Firstpage
573
Abstract
In this paper we investigated the self-heating effects in SiGe heterojunction bipolar transistors (HBTs) fabricated on SiGe alloy virtual substrate. Using a two-dimensional process and device numerical simulation, we have found that self-heating effects and local temperature increase due to the internal power dissipation are substantially more pronounced in virtual substrate HBTs in comparison with identical HBT devices on silicon substrate.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; software packages; substrates; device numerical simulation; heterojunction bipolar transistors; self-heating effects; silicon substrate; software package; two-dimensional process; virtual substrate SiGe HBT; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; MODFETs; Power dissipation; Predictive models; Silicon germanium; Substrates; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003. 6th International Conference on
Print_ISBN
0-7803-7963-2
Type
conf
DOI
10.1109/TELSKS.2003.1246291
Filename
1246291
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