Title :
Self-heating effects in virtual substrate SiGe HBTs
Author :
Jankovic, Nebojsa D. ; Horsfall, Aulton B.
Author_Institution :
Microelectron. Dept., Nis Univ., Serbia
Abstract :
In this paper we investigated the self-heating effects in SiGe heterojunction bipolar transistors (HBTs) fabricated on SiGe alloy virtual substrate. Using a two-dimensional process and device numerical simulation, we have found that self-heating effects and local temperature increase due to the internal power dissipation are substantially more pronounced in virtual substrate HBTs in comparison with identical HBT devices on silicon substrate.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; software packages; substrates; device numerical simulation; heterojunction bipolar transistors; self-heating effects; silicon substrate; software package; two-dimensional process; virtual substrate SiGe HBT; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; MODFETs; Power dissipation; Predictive models; Silicon germanium; Substrates; Temperature; Thermal conductivity;
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003. 6th International Conference on
Print_ISBN :
0-7803-7963-2
DOI :
10.1109/TELSKS.2003.1246291
