DocumentCode
399111
Title
A 160-GHz semiconductor mode-locked laser directly driven by an 80-GHz electrical signal
Author
Ohno, T. ; Iga, R. ; Kondo, Y. ; Furuta, T. ; Yoshino, K. ; Ito, H. ; Sato, K.
Author_Institution
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
fYear
2003
fDate
23-28 March 2003
Firstpage
669
Abstract
163.66-GHz optical pulse train was generated by a semiconductor mode-locked laser integrated with a high-mesa EA modulator synchronized with 81.83-GHz electrical signal. Timing jitter of 0.15 ps and very low amplitude modulation noise are achieved.
Keywords
amplitude modulation; electro-optical modulation; integrated optics; laser mode locking; optical fabrication; optical noise; optical pulse generation; semiconductor lasers; synchronisation; timing jitter; 0.15 ps; 163.66 GHz; 81.83 GHz; amplitude modulation noise; electrical signal; high-mesa EA modulator synchronization; integrated device; optical pulse train generated; semiconductor mode-locked laser fabrication; timing jitter; Amplitude modulation; Laser mode locking; Laser noise; Noise level; Optical pulse generation; Optical pulses; Pulse modulation; Semiconductor lasers; Signal generators; Timing jitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN
1-55752-746-6
Type
conf
DOI
10.1109/OFC.2003.1248484
Filename
1248484
Link To Document