Title :
Semiconductor lasers on type II heterostructures: calculation features and threshold characteristics
Author :
Sukhoivanov, Igor A. ; Mashoshina, Olga V.
Author_Institution :
Guanajuato Univ., Salamanca, Mexico
Abstract :
The aim of this work is to illustrate features of calculation for semiconductor lasers based on type-II heterostructures. The theoretical results founded on the given distinctions allowed to investigate the threshold current temperature dependence and research the behaviour of all its components by the example of InGaAsSb/GaSb heterostructure. the obtained data assure further threshold current optimization which will result in its lowering.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor heterojunctions; InGaAsSb-GaSb; InGaAsSb/GaSb heterostructure; semiconductor lasers; threshold current; threshold current temperature; type II heterostructures; Fiber lasers; Gas lasers; Laser radar; Laser theory; Pump lasers; Quantum well lasers; Radiative recombination; Semiconductor lasers; Solid lasers; Threshold current;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
Print_ISBN :
0-7803-7948-9
DOI :
10.1109/CAOL.2003.1250568
