DocumentCode
399795
Title
A study of fabrication techniques for sub-10nm thin undulated polysilicon films
Author
Badila, D. ; Ecoffey, S. ; Bouvet, D. ; Ionescu, A.M.
Author_Institution
Fac. of Electron. & Telecommun., Univ. "Politchnica" of Bucharest, Romania
Volume
1
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
For some single-electron memory architectures, room temperature operation requires a nano-grain ultra-thin (<10nm) and undulated polysilicon film as active region. This paper presents (i) several dry and wet etching techniques for fabricating ultra-thin polysilicon films with elevated contacts and (ii) two methods of undulating them, in order to obtain well-defined granular structures.
Keywords
elemental semiconductors; etching; nanotechnology; semiconductor thin films; silicon; sputter etching; 10 nm; Si; active region; dry etching; elevated contacts; fabrication techniques; granular structures; nano-grain ultra-thin polysilicon film; room temperature operation; single-electron memory architectures; sub-10nm thin undulated polysilicon films; undulated polysilicon film; wet etching; Contacts; Fabrication; Laboratories; Memory architecture; Reproducibility of results; Semiconductor films; Single electron memory; Temperature; Wet etching; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1251353
Filename
1251353
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