Integrated tunable optical interferometer obtained using <111> oriented silicon micromachining

Author

Cristea, D. ; Kusko, M. ; Tibeica, C. ; Muller, R. ; Manea, E. ; Syvridis, D.

Author_Institution

Nat. Inst. for R&D in Microtechnologies, Bucharest, Romania

Volume

1

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

The paper presents the design and the experiments performed for integration of a micromechanical voltage tunable Fabry-Perot interferometer structure with a silicon p-n photodiode in order to obtain a tunable optical sensor. In our approach, the top mirror of the Fabry-Perot cavity is an Au/SiO₂ movable membrane, formed by anisotropic etching of <111>-oriented Si wafers. The air-silicon surface acts as the lower mirror. To improve the bottom mirror reflectivity, an An layer can be deposited by electroplating. The upper movable mirror can be electrostatically actuated. This Fabry-Perot interferometer was realized on the top of a p-n photodiode.

Keywords

Fabry-Perot interferometers; elemental semiconductors; etching; micro-optics; micromachining; silicon; <111> oriented Si micromachining; Au/SiO₂ movable membrane; Si; anisotropic etching; bottom mirror reflectivity; electroplating; integrated tunable optical interferometer; micromechanical voltage tunable Fabry-Perot interferometer; p-n photodiode; photodiode; tunable optical sensor; upper movable mirror; Fabry-Perot interferometers; Integrated optics; Micromachining; Micromechanical devices; Mirrors; Optical design; Optical interferometry; Optical sensors; Photodiodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1251368

Filename

1251368