Title :
MOCVD growth of InGaAsN QWs and 1.3 μm VCSELs
Author :
Takeuchi, T. ; Chang, Y.-L. ; Leary, M. ; Mars, D. ; Tandon, A. ; Lin, C.K. ; Twist, R. ; Belov, S. ; Bour, D. ; Tan, M. ; Roh, D. ; Song, Y.-K. ; Mantese, L. ; Luan, H.-C.
Author_Institution :
Agilent Labs., Palo Alto, CA, USA
Abstract :
This paper demonstrates MOCVD growth of InGaAsN quantum wells and fabrication of vertical cavity surface emitting lasers (VCSELs). Results on the modulation and high temperature characteristics of 1.3 μm-range InGaAsN vertical cavity surface emitting lasers (VCSELs) are also presented. Over 1 mW of single-mode output power is obtained at 80°C. Clear eye opening at 2.5 Gb/s and 10 Gb/s are obtained up to 120°C and 90°C, respectively.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; optical modulation; quantum well lasers; semiconductor growth; semiconductor quantum wells; surface emitting lasers; 1.3 mum; 10 Gbit/s; 2.5 Gbit/s; 20 degC; 80 degC; InGaAsN; MOCVD growth; VCSEL fabrication; clear eye opening diagrams; high temperature characteristics; optical modulation; vertical cavity surface emitting lasers; Artificial intelligence; Gallium arsenide; MOCVD; Pollution measurement; Power generation; Rough surfaces; Surface contamination; Surface roughness; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251587
