MOCVD growth of InGaAsN QWs and 1.3 μm VCSELs

Author

Takeuchi, T. ; Chang, Y.-L. ; Leary, M. ; Mars, D. ; Tandon, A. ; Lin, C.K. ; Twist, R. ; Belov, S. ; Bour, D. ; Tan, M. ; Roh, D. ; Song, Y.-K. ; Mantese, L. ; Luan, H.-C.

Author_Institution

Agilent Labs., Palo Alto, CA, USA

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

35

Abstract

This paper demonstrates MOCVD growth of InGaAsN quantum wells and fabrication of vertical cavity surface emitting lasers (VCSELs). Results on the modulation and high temperature characteristics of 1.3 μm-range InGaAsN vertical cavity surface emitting lasers (VCSELs) are also presented. Over 1 mW of single-mode output power is obtained at 80°C. Clear eye opening at 2.5 Gb/s and 10 Gb/s are obtained up to 120°C and 90°C, respectively.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; optical modulation; quantum well lasers; semiconductor growth; semiconductor quantum wells; surface emitting lasers; 1.3 mum; 10 Gbit/s; 2.5 Gbit/s; 20 degC; 80 degC; InGaAsN; MOCVD growth; VCSEL fabrication; clear eye opening diagrams; high temperature characteristics; optical modulation; vertical cavity surface emitting lasers; Artificial intelligence; Gallium arsenide; MOCVD; Pollution measurement; Power generation; Rough surfaces; Surface contamination; Surface roughness; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251587

Filename

1251587