• DocumentCode
    40
  • Title

    Lifetime Distribution Analysis of Stress-Induced Voiding Based on Void Nucleation and Growth in Cu/Low- \\kappa Interconnects

  • Author

    Yokogawa, Shinji ; Tsuchiya, Hideaki

  • Author_Institution
    Device & Anal. Dev. Div., Renesas Electron. Corp., Sagamihara, Japan
  • Volume
    13
  • Issue
    1
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    272
  • Lastpage
    276
  • Abstract
    The lifetime distribution of stress-induced voiding with area scaling is investigated on a void nucleation and growth framework. The distribution resulting from the convolution integrals of the time to void nucleation and the time for void growth was applied to observed data. The time to void nucleation showed non-Poisson area scaling, whereas the time for void growth showed Poisson area scaling. Therefore, the area scaling effects were applied to a negative binominal distribution and a Poisson distribution, respectively. With a Monte Carlo simulation, it was found that the time for void growth will be dominant for the product-level lifetime.
  • Keywords
    Monte Carlo methods; Poisson distribution; integrated circuit interconnections; integrated circuit reliability; nucleation; Cu/low-κ interconnects; Monte Carlo simulation; Poisson distribution; lifetime distribution analysis; negative binominal distribution; non-Poisson area scaling; product-level lifetime; stress-induced voiding; void nucleation; Dielectrics; Grain boundaries; Metals; Monte Carlo methods; Reliability; Shape; Weibull distribution; Area scaling; Cu/low-$kappa$ ; Poisson distribution; Weibull distribution; negative binominal distribution; stress-induced voiding (SIV);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2013.2237775
  • Filename
    6403534