DocumentCode
40
Title
Lifetime Distribution Analysis of Stress-Induced Voiding Based on Void Nucleation and Growth in Cu/Low-
Interconnects
Author
Yokogawa, Shinji ; Tsuchiya, Hideaki
Author_Institution
Device & Anal. Dev. Div., Renesas Electron. Corp., Sagamihara, Japan
Volume
13
Issue
1
fYear
2013
fDate
Mar-13
Firstpage
272
Lastpage
276
Abstract
The lifetime distribution of stress-induced voiding with area scaling is investigated on a void nucleation and growth framework. The distribution resulting from the convolution integrals of the time to void nucleation and the time for void growth was applied to observed data. The time to void nucleation showed non-Poisson area scaling, whereas the time for void growth showed Poisson area scaling. Therefore, the area scaling effects were applied to a negative binominal distribution and a Poisson distribution, respectively. With a Monte Carlo simulation, it was found that the time for void growth will be dominant for the product-level lifetime.
Keywords
Monte Carlo methods; Poisson distribution; integrated circuit interconnections; integrated circuit reliability; nucleation; Cu/low-κ interconnects; Monte Carlo simulation; Poisson distribution; lifetime distribution analysis; negative binominal distribution; non-Poisson area scaling; product-level lifetime; stress-induced voiding; void nucleation; Dielectrics; Grain boundaries; Metals; Monte Carlo methods; Reliability; Shape; Weibull distribution; Area scaling; Cu/low-$kappa$ ; Poisson distribution; Weibull distribution; negative binominal distribution; stress-induced voiding (SIV);
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2013.2237775
Filename
6403534
Link To Document