Monolithic integration of InGaAs/AIGaInAs Mach-Zehnder interferometers using quantum well intermixing

Author

Sorel, M. ; Wong, H.Y. ; Marsh, J.H. ; Bryce, A.C.

Author_Institution

Dept. of Electr. & Electron. Eng., Glasgow Univ., UK

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

439

Abstract

Monolithic Mach-Zehnder interferometers have been fabricated in InGaAs/AlGaInAs by quantum well intermixing (QWI). The devices combine low-loss waveguides, MMI couplers and optical amplifiers. Waveguide losses in the passive sections are as low as 5-6 cm^-1 at a wavelength 1.55 μm and good modulation efficiency has been measured with current injection.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical couplers; optical fabrication; optical losses; optical modulation; optical waveguides; semiconductor optical amplifiers; semiconductor quantum wells; 1.55 mum; InGaAs-AlGaInAs; MMI couplers; Mach-Zehnder interferometers; current injection; low-loss waveguides; modulation efficiency; monolithic integration; optical amplifiers; quantum well intermixing; waveguide losses; Couplers; Indium gallium arsenide; Monolithic integrated circuits; Optical amplifiers; Optical devices; Optical interferometry; Optical modulation; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251897

Filename

1251897