Complex Permittivity Determination of Thin-Films Through RF-Measurements of a MIM Capacitor

Author

Sejas-Garcia, Svetlana C. ; Torres-Torres, R. ; Valderrama-B, Rene ; Molina, Juan

Author_Institution

Dept. of Electron., INAOE, Tonantzintla, Mexico

Volume

24

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

805

Lastpage

807

Abstract

A method for determining the permittivity and loss tangent of thin-film layers is presented. The method relies on the measurement of the reflection coefficient to a single metal-insulator-metal (MIM) structure without requiring additional de-embedding dummy structures to account for the test-fixture parasitics. Results allow to obtain the frequency-dependent dielectric parameters, whereas the impact of the test-fixture parasitics is quantified by developing the corresponding equivalent circuit model. The accuracy of this model is verified by obtaining excellent simulation-experiment correlation of the MIM admittance at microwave frequencies.

Keywords

MIM structures; capacitors; dielectric thin films; equivalent circuits; permittivity; MIM capacitor; RF measurements; dummy structures; equivalent circuit model; loss tangent; metal-insulator-metal structure; permittivity determination; reflection coefficient; test-fixture parasitics; thin films; Admittance; Dielectric measurement; Dielectrics; High K dielectric materials; Integrated circuit modeling; MIM capacitors; Permittivity; Thin films; High-k; loss tangent; permittivity; thin-films;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2348179

Filename

6881727