Power electronics innovation with next generation advanced power devices

Author

Ohashi, Hiromichi

Author_Institution

Tokyo Inst. of Technol., Japan

fYear

2003

fDate

23-23 Oct. 2003

Firstpage

9

Lastpage

13

Abstract

Recent researches on next-generation power devices has shown remarkable progress, especially in wide band-gap power devices such as silicon carbide and gallium nitride devices, as well as novel silicon devices, like a super junction FETs. The future direction of power electronics applications is investigated in a term of output power density as an index of future power electronics roadmap, instead of power conversion efficiency; taking into account advanced devices and related technologies. A next-generation CPU power supply, a compact unit-inverter and an electric vehicle are selected as typical future applications. The possibility of power electronics innovation, with progress in the output power densities of more than 10 W/cm/sup 3/ to 30 W/cm/sup 3/ is discussed in this paper.

Keywords

power conversion; power semiconductor devices; CPU power supply; advanced power devices; band-gap power devices; compact unit-inverter; electric vehicle; output power density; power electronics; power electronics roadmap; Gallium nitride; III-V semiconductor materials; JFETs; Photonic band gap; Power conversion; Power electronics; Power generation; Silicon carbide; Silicon devices; Technological innovation;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Energy Conference, 2003. INTELEC '03. The 25th International

Conference_Location

Yokohama, Japan

Print_ISBN

4-88552-196-3

Type

conf

Filename

1252084