DocumentCode
400344
Title
Low thermal resistance flip-chip bonding of 850 nm 2-D VCSEL arrays capable of 10 Gbit/s/ch operation
Author
Roscher, Hendrik ; Michalzik, Rainer
Author_Institution
Optoelectron. Dept., Ulm Univ., Germany
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
511
Abstract
In this work, 8×8 and 4×8 arrays of 850 nm oxide-confined VCSELs with 250 μm device pitch are directly hybridized onto silicon fanout chips by means of an indium solder based flip-chip technology. Using this structure, digital data transmission experiments are conducted, which demonstrates that quasi error-free (bit error rate <10-12) 10 Gbit/s transmission can be achieved.
Keywords
flip-chip devices; indium; optical communication equipment; optical fabrication; semiconductor laser arrays; silicon; solders; surface emitting lasers; thermal resistance measurement; 10 Gbit/s; 2-D VCSEL arrays; 250 micron; 850 nm; In; Si; digital data transmission; hybridization; indium solder; low thermal resistance flip-chip bonding; oxide-confined VCSEL; quasi error-free transmission; silicon fanout chips; Bandwidth; Bonding; Indium; Optical arrays; Optical surface waves; Optical transmitters; Substrates; Surface topography; Thermal resistance; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1252898
Filename
1252898
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