Hot carrier emission from 50 nm n- and p-channel MOSFET devices

In this analysis, we present emission spectra from both n- and p-channel transistors fabricated on 90 nm technology featuring 50 nm channel lengths .Time resolved emission (TRE) is an important through-silicon integrated circuit timing analysis technique, which enables noninvasive characterization of internal dynamic circuits by means of the collection and the time "stamping" of near-IR photons naturally emitted from biased transistors. Spectral analysis of hot carrier emissions in MOSFET devices is of interest for several reasons: (1) It may help to improve the bandwidth of existing TRE technologies artificially by allowing the distinction between n- and p-channel device emissions; (2) It may lead to improved TRE system response optimization; (3) It may provide new or enhanced understanding of internal device physics; and (4) It may offer deeper insight into the scalability of existing TRE technologies.