• DocumentCode
    400387
  • Title

    Germanium on double-SOI photodetectors for 1550 nm operation

  • Author

    Dosunmu, Olufemi ; Emsley, Matthew K. ; Cannon, Douglas D. ; Ghyselen, Bruno ; Kimerling, Lionel C. ; Ünlü, M. Selim

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
  • Volume
    2
  • fYear
    2003
  • fDate
    27-28 Oct. 2003
  • Firstpage
    853
  • Abstract
    In this paper, we have fabricated a resonant cavity enhanced (RCE) Ge-on-double-silicon on insulator (SOI) photodetector for operation around the 1550 nm communication wavelength. The enhanced response of this detector is attributed to both the resonant cavity effect as well as the strain induced band gap narrowing of the Ge layer.
  • Keywords
    cavity resonators; elemental semiconductors; energy gap; germanium; optical communication equipment; optical fabrication; photodetectors; silicon compounds; silicon-on-insulator; 1550 nm; SOI; Si; SiO2-Si-Ge; communication wavelength; double-silicon-on-insulator photodetector fabrication; germanium layer; resonant cavity; strain induced band gap narrowing; Absorption; Detectors; Distributed Bragg reflectors; Germanium; Lattices; Materials science and technology; Mirrors; Photodetectors; Photonic band gap; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7888-1
  • Type

    conf

  • DOI
    10.1109/LEOS.2003.1253069
  • Filename
    1253069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400387