DocumentCode
400398
Title
Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers
Author
Stiff-Roberts, A.D. ; Chakrabarti, S. ; Bhattacharya, P. ; Kennerly, S.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
925
Abstract
In this paper, we present a QDIP heterostructure, comprised of InAs QDs embedded in a periodic AlAs/GaAs superlattice (SL) barrier. This SL barrier allows us to control the performance of QDIPs, culminating in state-of-the-art responsivity and conversion efficiency for a QDIP with a total SL period of 15 nm.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; infrared spectra; optical multilayers; photodetectors; semiconductor quantum dots; semiconductor superlattices; 15 nm; AlAs-GaAs; conversion efficiency; periodic AlAs-GaAs superlattice barriers; quantum dot infrared photodetector heterostructure; quantum dot infrared photodetector performance control; state-of-the-art responsivity; Dark current; Electrons; Gallium arsenide; Infrared detectors; Infrared spectra; Laboratories; Photodetectors; Quantum dots; Superlattices; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253106
Filename
1253106
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