Title :
First observation of 1.55 μm intersubband absorption in MOVPE-grown AIN/GaN multiple quantum wells
Author :
Kumtornkittikul, Chaiyasit ; Waki, Lchitaro ; Shikogaki, Y. ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Abstract :
We demonstrate the first intersubband absorption at 1.55 μm in MOVPE-grown AIN/GaN MQW structures. The absorption linewidth is 45 meV, the narrowest ever reported for 1.55-μm intersubband absorption in nitride based MQWs.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; infrared spectroscopy; semiconductor quantum wells; spectral line narrowing; vapour phase epitaxial growth; wide band gap semiconductors; 1.55 micron; AIN-GaN multiple quantum wells; AlN; GaN; MOVPE growth; absorption linewidth narrowing; intersubband absorption; nitride based MQW; Absorption; Conducting materials; Epitaxial growth; Epitaxial layers; Gallium nitride; Materials science and technology; Optical device fabrication; Optical materials; Optoelectronic devices; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253118
