DocumentCode
400401
Title
First observation of 1.55 μm intersubband absorption in MOVPE-grown AIN/GaN multiple quantum wells
Author
Kumtornkittikul, Chaiyasit ; Waki, Lchitaro ; Shikogaki, Y. ; Nakano, Yoshiaki
Author_Institution
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
947
Abstract
We demonstrate the first intersubband absorption at 1.55 μm in MOVPE-grown AIN/GaN MQW structures. The absorption linewidth is 45 meV, the narrowest ever reported for 1.55-μm intersubband absorption in nitride based MQWs.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; infrared spectroscopy; semiconductor quantum wells; spectral line narrowing; vapour phase epitaxial growth; wide band gap semiconductors; 1.55 micron; AIN-GaN multiple quantum wells; AlN; GaN; MOVPE growth; absorption linewidth narrowing; intersubband absorption; nitride based MQW; Absorption; Conducting materials; Epitaxial growth; Epitaxial layers; Gallium nitride; Materials science and technology; Optical device fabrication; Optical materials; Optoelectronic devices; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253118
Filename
1253118
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