DocumentCode
400409
Title
Monolithic photoreceivers for 60 Gbit/s and beyond
Author
Bach, H.-G.
Author_Institution
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
991
Abstract
An InP-based photoreceiver, comprising a waveguide-integrated photodiode and a distributed amplifier, is presented which allows DC-coupled interfacing to subsequent electronics. The O/E conversion capability up to 66 Gbit/s and a 40 Gbit/s BER measurement are shown.
Keywords
III-V semiconductors; amplifiers; error statistics; indium compounds; monolithic integrated circuits; optical communication; optical receivers; optical waveguides; photodiodes; 40 Gbit/s; 60 Gbit/s; BER measurement; DC-coupled interface; InP; InP-based photoreceiver; O/E conversion capability; distributed amplifier; monolithic photoreceiver; waveguide-integrated photodiode; Bit error rate; Bit rate; Frequency conversion; Frequency measurement; Noise figure; Optical receivers; Optical signal processing; Optical transmitters; Optical waveguides; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253140
Filename
1253140
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