DocumentCode
400503
Title
Amplitude-phase-shift masks for projection lithography of submicron technology
Author
Novosyadlyy, S.
fYear
2003
fDate
18-22 Feb. 2003
Firstpage
66
Lastpage
68
Abstract
Submicrometer optical lithography is possible with conventional projection cameras when the mask controls the phase of the light at the object plane. The phase shifting mask consists of a normal transmission mask that has been with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Thus the phase-shifting mask may be the most desirable device for enhancing optical lithography resolution in the VLSI era.
Keywords
antireflection coatings; phase shifting masks; transparency; ultraviolet lithography; VLSI; amplitude-phase-shift masks; antireflection covers; coherent UV energy; lithography resolution; optical lithography; patterned transparent layer; photomask; projection lithography; submicron technology; transmission mask; transparent films; Amplitude modulation; Brightness; Frequency; Lithography; Optical devices; Optical films; Optical modulation; Optical refraction; Phase modulation; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
Print_ISBN
966-553-278-2
Type
conf
DOI
10.1109/CADSM.2003.1254984
Filename
1254984
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