• DocumentCode
    400503
  • Title

    Amplitude-phase-shift masks for projection lithography of submicron technology

  • Author

    Novosyadlyy, S.

  • fYear
    2003
  • fDate
    18-22 Feb. 2003
  • Firstpage
    66
  • Lastpage
    68
  • Abstract
    Submicrometer optical lithography is possible with conventional projection cameras when the mask controls the phase of the light at the object plane. The phase shifting mask consists of a normal transmission mask that has been with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Thus the phase-shifting mask may be the most desirable device for enhancing optical lithography resolution in the VLSI era.
  • Keywords
    antireflection coatings; phase shifting masks; transparency; ultraviolet lithography; VLSI; amplitude-phase-shift masks; antireflection covers; coherent UV energy; lithography resolution; optical lithography; patterned transparent layer; photomask; projection lithography; submicron technology; transmission mask; transparent films; Amplitude modulation; Brightness; Frequency; Lithography; Optical devices; Optical films; Optical modulation; Optical refraction; Phase modulation; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
  • Print_ISBN
    966-553-278-2
  • Type

    conf

  • DOI
    10.1109/CADSM.2003.1254984
  • Filename
    1254984