Modeling of ballistic carbon nanotube field effect transistors for efficient circuit simulation

Author

Raychowdhury, A. ; Mukhopadhyay, Saibal ; Roy, Kaushik

Author_Institution

Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2003

fDate

9-13 Nov. 2003

Firstpage

487

Lastpage

490

Abstract

Carbon Nanotube Field-Effect Transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators have been developed to estimate their performance in a sub 10 nm transistor era. This paper presents a novel method of circuit-compatible modeling of CNFETs in their ultimate performance limit. The model so developed has been used to simulate arithmetic and logic blocks using HSPICE.

Keywords

CMOS integrated circuits; SPICE; carbon nanotubes; circuit simulation; field effect transistors; integrated circuit modelling; 10 nm; CMOS; HSPICE; ballistic CNFET modelling; ballistic carbon nanotube field effect transistor modelling; circuit simulation; complementary metal oxide semiconductor; device simulators; simulation program with integrated circuit emphasis; Arithmetic; CMOS logic circuits; CNTFETs; Carbon nanotubes; Circuit simulation; Computational modeling; Delay estimation; Numerical models; SPICE; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Aided Design, 2003. ICCAD-2003. International Conference on

Conference_Location

San Jose, CA, USA

Print_ISBN

1-58113-762-1

Type

conf

DOI

10.1109/ICCAD.2003.159728

Filename

1257855