Optimization of high tilt pocket implant process for improving deep sub-micro PMOS device sensitivity

High tilt pocket implants are evaluated for various conditions of tilt and twist combination. The effects of tilt angle on both sheet resistance (Rs) and 0.13 μm PMOS device characteristics are investigated. By variation of tilt angle it is shown that. both lateral dopant profile of pocket implant and substrate channeling effect will dominate the PMOS device sensitivity. A simple solution to good device stability by employing the channeling effect is demonstrated. With the assist of crystal channel at specific tilt and twist angle, the PMOS drive current sensitivity to tilt angle will be greatly reduced by 67% to 0.03 mA/degree and below.