• DocumentCode
    400808
  • Title

    Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels

  • Author

    Suvkhanov, A. ; Mirabedini, M. ; Hornback, V.

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    SRP, SIMS and C-V measurements of implanted Si wafers were carried out in this study to examine the effect of annealing conditions on the activation of acceptors. Shorter RTP annealing at relatively low temperatures provided higher Indium activation levels as determined by Rs measurements. The influence of the implantation sequence (In+B and B+In) on the dopant distribution was also investigated. The In+B implantation sequence yielded shallower profiles than the B+In implantation. It can be suggested that Indium implantation provides efficient pre-amorphization condition for Boron implantation. Device data for some of these conditions were obtained and the influence of RTP anneal on device performance was critically reviewed.
  • Keywords
    CMOS integrated circuits; boron; elemental semiconductors; indium; ion implantation; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; silicon; 0.1 micron; C-V measurements; In activation; RTP anneal; SIMS; SRP; Si:B,In; activation levels; annealing conditions; device performance; implanted Si wafers; shallower profiles; sub-0.1 μm retrograde channels; Annealing; Boron; Capacitance-voltage characteristics; Implants; Indium; Large scale integration; Logic; MOSFETs; Solid state circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1257930
  • Filename
    1257930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400808