Title :
Recessed junction and low energy n-junction implantation characteristics
Author :
Lee, Brian C. ; Yoo, J.R. ; Lee, D.H. ; Kim, C.S. ; Kim, Song Min ; Choi, Soon-Mi ; Chung, U.I. ; Moon, J.T.
Abstract :
The characteristics of cell transistor with low energy junction implantation and recessed junction, which is formed by in_situ phosphorus doped selective silicon growth, are investigated. Adding the low energy n-junction implantation drastically reduces the contact resistance of pad/n-junction. And also, the drive current is improved without any degradation of BV (Breakdown Voltage) and leakage characteristics. Plasma damage free TDSE (Thermal Desorption of Silicon Etching) processing using the Cl2 gas chemistry in UHV CVD Chamber is used to control the junction depth. The recessed junction is formed with phosphorus-doped silicon using the SEG (Selective Epitaxial Growth) process and the characteristics of recessed junction are evaluated.
Keywords :
CMOS integrated circuits; contact resistance; elemental semiconductors; etching; ion implantation; leakage currents; phosphorus; semiconductor device breakdown; semiconductor doping; semiconductor epitaxial layers; silicon; thermally stimulated desorption; Cl2; Cl2 gas chemistry; Si:P; UHV CVD; breakdown voltage; cell transistor; contact resistance; drive current; junction depth; leakage characteristics; low energy n-junction implantation characteristics; plasma damage free thermal desorption of silicon etching; recessed junction; selective epitaxial growth; Contact resistance; Degradation; Epitaxial growth; Etching; Implants; Parasitic capacitance; Plasma chemistry; Plasma temperature; Silicon; Threshold voltage;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257947
