Shallow junction technology for advanced CMOS devices - transitioning to plasma doping from beamline implantation

Novel technologies are required to meet the material characteristics and productivity requirements of ultra-shallow junctions for sub 100nm gate transistors. This paper will discuss transitioning from traditional beamline implantation to plasma doping of boron (with BF₃ and B₂H₆ plasmas) and arsenic (with AsH₃ plasma) using low thermal budget processing. The ability of plasma doping to achieve equivalent or superior performance in the areas of as implanted junction depth, annealed junction depth, dopant profile consistency across the wafer and angle control will be explored. This comparison will be used to establish the ability of plasma doping to replace beamline implants for current and future shallow junction requirements.