Title :
Characterisation of low energy antimony (2-5 keV) implantation into silicon
Author :
Collart, E.J.H. ; Kirkwood, D. ; van den Berg, J.A. ; Werner, Michael ; Vandervorst, W. ; Brijs, B. ; Bailey, P. ; Noakes, T.C.Q.
Abstract :
Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).
Keywords :
antimony; doping profiles; elemental semiconductors; ion implantation; ion-surface impact; secondary ion mass spectra; semiconductor doping; silicon; 2 keV; 5 keV; SIMS; Si:Sb; damage distribution data; depth profiles; electrical sheet resistance; low energy implantation; medium energy ion scattering; n-type ultra-shallow junction formation; Electric resistance; Implants; Laboratories; Mass spectroscopy; Rapid thermal annealing; Rapid thermal processing; Scattering; Silicon; Solids; Stability;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257960
