Title :
In-line measurement of Xj on 300 mm wafers
Author :
Corcoran, S. ; Gillespie, P. ; Segovia, M. ; Borden, P.
Abstract :
Process control issues are insufficiently addressed by current metrology for USJ formation on 300 mm wafers at advanced technology nodes. The Carrier Illumination™ technique, an in-line optical approach, is examined for use in process control (SPC) and implant/anneal root-cause isolation (characterization).
Keywords :
doping profiles; ion implantation; rapid thermal processing; semiconductor doping; 300 mm; 300 mm wafers; Carrier Illumination technique; advanced technology nodes; implant/anneal root-cause isolation; in-line measurement; in-line optical approach; process control; Annealing; Automatic control; Energy measurement; Implants; Isolation technology; Metrology; Monitoring; Optical sensors; Process control; Production;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257965
