• DocumentCode
    400837
  • Title

    In-line measurement of Xj on 300 mm wafers

  • Author

    Corcoran, S. ; Gillespie, P. ; Segovia, M. ; Borden, P.

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    Process control issues are insufficiently addressed by current metrology for USJ formation on 300 mm wafers at advanced technology nodes. The Carrier Illumination™ technique, an in-line optical approach, is examined for use in process control (SPC) and implant/anneal root-cause isolation (characterization).
  • Keywords
    doping profiles; ion implantation; rapid thermal processing; semiconductor doping; 300 mm; 300 mm wafers; Carrier Illumination technique; advanced technology nodes; implant/anneal root-cause isolation; in-line measurement; in-line optical approach; process control; Annealing; Automatic control; Energy measurement; Implants; Isolation technology; Metrology; Monitoring; Optical sensors; Process control; Production;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1257965
  • Filename
    1257965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400837