DocumentCode
400845
Title
Characterization of charging damage in plasma doping
Author
Henke, Daniel ; Walther, Sven ; Weeman, J. ; Dirnecker, T. ; Ruf, Andreas ; Beyer, A. ; Lee, Kahyun
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
201
Lastpage
204
Abstract
MOS capacitors with attached antennas of different size and shape were used to characterize the charging damage in PLAsma Doping (PLAD). Additional resist patterns offer the possibility to investigate the impact of photoresist on charging damage. This test of PLAD implants uses a number of plasma current densities and implant pulse widths to explore a wide range of process conditions. The charging damage was studied for process variations of energy, dose and duty cycles for different dopants.
Keywords
MOS capacitors; ion implantation; photoresists; semiconductor doping; MOS capacitors; charging damage; dose; duty cycles; energy; photoresist; plasma doping; resist patterns; Implants; Integrated circuit technology; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Pulse measurements; Semiconductor device doping; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1257973
Filename
1257973
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