orig-research

Author

Blake, J. ; Richards, Sean

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

391

Lastpage

394

Abstract

Over the last two years Ibis has designed and built a new magnetically scanned implanter, the i2000/spl trade/, specifically to meet the needs for volume production of low dose 300mm SIMOX. The i2000/spl trade/ design addresses the wide range of process conditions required for these new processes, including the "touchup" or damage engineering implant. Extremely high beam utilization through magnetic scanning, off hub cooling, fast heating and handling make the productivity of the i2000/spl trade/ higher than other SIMOX implanters (30,000 300mm wafers per year with SIMOX processes currently in volume production). Design aspects and results from volume manufacturing of 300mm SIMOX wafers are presented.

Keywords

SIMOX; ion implantation; ion sources; process control; productivity; semiconductor device manufacture; Ibis i2000 SIMOX ion implanter; damage engineering implant; factory automation; fast handling; fast heating; high beam utilization; ion source; low dose SIMOX; magnetically scanned implanter; off hub cooling; productivity; volume manufacturing; volume production; Apertures; Cooling; Design engineering; Electromagnetic heating; Implants; Manufacturing; Plasma applications; Production; Radio frequency; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258022

Filename

1258022